NE3517S03 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – K-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL GaAs HJ-FET

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3517S03
K-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL GaAs HJ-FET
FEATURES
• Super low noise figure, high associated gain
NF = 0.7 dB TYP., Ga = 13.5 dB TYP. @ f = 20 GHz
• K-band Micro-X plastic (S03) package
APPLICATIONS
• 20 GHz band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NE3517S03-T1C NE3517S03-T1C-A S03 (Pb-Free) 2 kpcs/reel
NE3517S03-T1D NE3517S03-T1D-A
10 kpcs/reel
Marking
Supplying Form
E
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE3517S03-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot ^Note
Tch
Tstg
Ratings
4
3
IDSS
100
165
+125
65 to +125
Unit
V
V
mA
A
mW
C
C
Note Mounted on 1.08 cm²  1.0 mm (t) glass epoxy PCB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10787EJ01V0DS (1st edition)
Date Published November 2009 NS