NE3515S02-T1C-A Datasheet, PDF (1/9 Pages) California Eastern Labs – X to Ku-BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3515S02
X to Ku-BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure, high associated gain and middle output power
NF = 0.3 dB TYP., Ga = 12.5 dB TYP. @ f = 12 GHz, VDS = 2 V, ID = 10 mA
PO (1dB) = +14 dBm TYP. @ f = 12 GHz, VDS = 3 V, ID = 25 mA set (Non-RF)
• Micro-X plastic (S02) package
APPLICATIONS
• X to Ku-band local buffer amplifier, PA driver amplifier, low noise amplifier, mixer
• DBS LNB, VSAT
• Other X to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NE3515S02-T1C NE3515S02-T1C-A S02 (Pb-Free) 2 kpcs/reel
NE3515S02-T1D NE3515S02-T1D-A
10 kpcs/reel
Marking
Supplying Form
G
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3515S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot ^Note
Tch
Tstg
Ratings
4
3
IDSS
100
165
+125
65 to +125
Unit
V
V
mA
A
mW
C
C
Note Mounted on 1.08 cm²  1.0 mm (t) glass epoxy PCB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10708EJ01V0DS (1st edition)
Date Published February 2008 NS