NE3514S02_13 Datasheet, PDF (1/8 Pages) California Eastern Labs – HETERO JUNCTION FIELD EFFECT TRANSISTOR

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3514S02
K BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.75 dB TYP., Ga = 10 dB TYP. @ f = 20 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• 20 GHz-band DBS LNB
• Other K-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NE3514S02-T1C NE3514S02-T1C-A S02 (Pb-Free) 2 kpcs/reel
NE3514S02-T1D NE3514S02-T1D-A
10 kpcs/reel
Marking
Supplying Form
D
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3514S02-A
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
Ptot ^Note
Tch
Tstg
Ratings
4
3
IDSS
100
165
+125
65 to +125
Unit
V
V
mA
A
mW
C
C
Note Mounted on 1.08 cm²  1.0 mm (t) glass epoxy PCB
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PG10593EJ01V0DS (1st edition)
Date Published February 2006 CP(N)