NE3512S02 Datasheet, PDF (1/8 Pages) California Eastern Labs – HETERO JUNCTION FIELD EFFECT TRANSISTOR

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3512S02
C TO Ku BAND SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.35 dB TYP., Ga = 13.5 dB TYP. @ f = 12 GHz
• Micro-X plastic (S02) package
APPLICATIONS
• C to Ku-band DBS LNB
• Other C to Ku-band communication systems
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
NE3512S02-T1C NE3512S02-T1C-A S02 (Pb-Free) 2 kpcs/reel
NE3512S02-T1D NE3512S02-T1D-A
10 kpcs/reel
Marking
Supplying Form
C
• 8 mm wide embossed taping
• Pin 4 (Gate) faces the perforation side
of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3512S02
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS
4
V
VGS
−3
V
ID
IG
Ptot ^Note
IDSS
100
165
mA
µA
mW
Tch
+125
°C
Tstg
−65 to +125
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10592EJ01V0DS (1st edition)
Date Published February 2006 CP(N)