NE3510M04 Datasheet, PDF (1/11 Pages) California Eastern Labs – HETERO JUNCTION FIELD EFFECT TRANSISTOR

DATA SHEET
HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3510M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Low noise figure and high associated gain
NF = 0.45 dB TYP., Ga = 16 dB TYP. @ f = 4 GHz, VDS = 2 V, ID = 15 mA
NF = 0.35 dB TYP., Ga = 19 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA (Reference only)
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3510M04
NE3510M04-A
Flat-lead 4-pin thin- 50 pcs (Non reel) V81 • 8 mm wide embossed taping
NE3510M04-T2 NE3510M04-T2-A ^{type super minimold} 3 kpcs/reel
(M04) (Pb-Free)
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3510M04-A
ABSOLUTE MAXIMUM RATINGS (TA = +25$C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDS
VGS
ID
IG
P Note
tot
Tch
Tstg
Ratings
4.0
<3.0
IDSS
140
125
+150
<65 to +150
Unit
V
V
mA
+A
mW
$C
$C
Note Mounted on 1.08 cm² = 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Document No. PG10676EJ01V0DS (1st edition)
Date Published July 2007 NS
2007