NE3509M04_06 Datasheet, PDF (1/9 Pages) California Eastern Labs – L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

HETERO JUNCTION FIELD EFFECT TRANSISTOR
NE3509M04
L TO S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
• Super low noise figure and high associated gain
NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA
• Flat-lead 4-pin thin-type super minimold (M04) package
APPLICATIONS
• Satellite radio (SDARS, DMB, etc.) antenna LNA
• GPS antenna LNA
• Low noise amplifier for microwave communication system
ORDERING INFORMATION
Part Number
Order Number
Package
Quantity
Marking
Supplying Form
NE3509M04
NE3509M04-A
Flat-lead 4-pin thin- 50 pcs (Non reel) V80 • 8 mm wide embossed taping
NE3509M04-T2 NE3509M04-T2-A ^{type super minimold} 3 kpcs/reel
(M04) (Pb-Free)
• Pin 1 (Source), Pin 2 (Drain) face
the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order: NE3509M04
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Gate Current
Total Power Dissipation
Channel Temperature
Storage Temperature
Symbol
Ratings
Unit
VDS
4.0
V
VGS
−3.0
V
ID
IG
Ptot ^Note
IDSS
200
150
mA
µA
mW
Tch
+150
°C
Tstg
−65 to +150
°C
Note Mounted on 1.08 cm² × 1.0 mm (t) glass epoxy PCB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
Document No. PG10608EJ01V0DS (1st edition)
Date Published April 2006 NS CP(K)