NE3508M04 Datasheet, PDF (1/11 Pages) California Eastern Labs – HETERO JUNCTION FIELD EFFECT TRANSISITOR

PRELIMINARY PRODUCT INFORMATION
HETERO JUNCTION FIELD EFFECT TRANSISITOR
NE3508M04
L to S BAND LOW NOISE AMPLIFIER
N-CHANNEL HJ-FET
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.45dB TYP. Ga=14dB TYP. @f=2GHz, VDS=2V, ID=10mA
- Flat-lead 4-pin tin-type super mini-mold(M04) package (Pb-Free T. )
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
Part Number
Order Number
Quantity
Marking
Supplying Form
NE3508M04
NE3508M04-A
50pcs (Non reel)
- 8 mm wide emboss taping
NE3508M04-T2 NE3508M04-T2-A 3 Kpcs/reel
V79
- Pin1(Source), Pin2(Drain)
face the perforation side of the tape
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3508M04
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )
PARAMETER
SYMBOL
Drain to Source Voltage
VDS
Gate to Source Voltage
VGS
Drain Current
ID
Gate Current
Total Power Dissipation
IG
Ptot ^Note
Channel Temperature
Tch
Storage Temperature
T stg
Note Mounted on 1.08cm² X 1.0mm(t) glass epoxy PCB
RATINGS
4.0
-3.0
I DSS
400
175
+150
- 65 to +150
UNIT
V
V
mA
µA
mW
°C
°C
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm
that this is the latest version.
Document No. P*****EJ0V0PM00 (10th edition)
Date Published October 2005 CP(K)
© NEC Compound Semiconductor Devices 2005