NE3505M04 Datasheet, PDF (1/20 Pages) California Eastern Labs – HETERO JUNCTION FIELD EFFECT TRANSISITOR

DATA SHEET
ç
HETERO JUNCTION FIELD EFFECT TRANSISITOR
ç
ç
NE3505M04
ççççççççççççç
L to C BAND SUPER LOW NOISE AND HIGH-GAIN AMPLIFIER
N-CHANNEL HJ-FET
ç
FEATURES
- Super Low Noise Figure & Associated Gain :
NF=0.4dB TYP. Ga=15.5dB TYP. @f=4GHz
NF=0.35dB TYP. Ga=17dB TYP. @f=2.4GHz (Reference Only)
NF=0.45dB TYP. Ga=14dB TYP. @f=5.8GHz (Reference Only)
- Flat-lead 4-pin tin-type super mini-mold(M04) package
APPLICATIONS
- Satellite Radio(SDARS, DMB, etc.) antenna LNA
- 5.8GHz-band WLAN LNA
- LNA for Micro-wave communication system
ORDERING INFORMATION
PART NUMBER
Quantity
NE3505M04
50pcs (Non reel)
NE3505M04-T2 3 Kpcs/reel
Marking
Packaging Style
8 mm wide emboss taping
V76
1pin(source), 2pin(Drain) feed hole direction
Remark To order evaluation samples, please contact your local NEC sales office.
Part number for sample order: NE3505M04
ç
ABSOLUTE MAXIMUM RATINGS ( TA =+ 25 °C )
PARAMETER
SYMBOL
RATINGS
Drain to Source Voltage
VDS
4.0
Gate to Source Voltage
VGS
-3.0
Drain Current
ID
IDSS
Gate Current
IG
140
Total Power Dissipation
Ptot
125
Channel Temperature
Tch
+125
Storage Temperature
Tstg
- 65 to +125
UNIT
V
V
mA
µA
mW
°C
°C
Caution : Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
DDoacteumPuebn_{çltisNhoe.dP*A*u**g*uEsJt02V000P4Mç} 0C0P((1Ks)t edition)
Printed in_çJapan
ç ç © NEC Compound Semiconductor Devices 2004