NE34018 Datasheet, PDF (1/10 Pages) NEC – L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET

GaAs HJ-FET L TO S BAND
LOW NOISE AMPLIFIER NE34018
(New Plastic Package)
FEATURES
• LOW COST MINIATURE PLASTIC PACKAGE
(SOT-343)
• LOW NOISE FIGURE:
0.6 dB typical at 2 GHz
• HIGH ASSOCIATED GAIN:
16.0 dB typical at 2 GHz
• LG = 0.6 µm, WG = 400 µm
• TAPE & REEL PACKAGING
DESCRIPTION
NEC's NE34018 is a low cost gallium arsenide Hetero-Junc-
tion FET housed in a miniature (SOT-343) plastic surface
mount package. The device is fabricated using ion implanta-
tion for improved RF and DC performance, reliability, and
uniformity. Its low noise figure, high gain, small size and
weight make it an ideal low noise amplifier transistor in the 1-
3 GHz frequency range. The NE34018 is suitable for GPS,
PCS, WLAN, MMDS, and other commercial applications.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 3 V, IDS = 20 mA
4
25
20
GA
3
15
10
2
5
0
1
NF
0
0.5
1
2 3 4 5 6 7 8 910
Frequency, f (GHz)
18 Package
SOT-343 Style
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOL
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
UNITS
NE34018
18
MIN
TYP
MAX
NF
Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz
dB
0.6
1.0
GA
Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz
dB
14.0
16.0
P1dB
Output Power at 1 dB Gain Compression Point, f = 2 GHz
VDS = 2 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dBm
dBm
12
16.5
G1dB
Gain at P1dB, f = 2 GHz
VDS = 2 V, IDS = 10 mA
VDS = 3 V, IDS = 30 mA
dB
17.0
dB
17.5
O/P IP3
Output IP3 at f = 2 GHz, ∆f = 1 MHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 30 mA
dBm
23
dBm
32
IDSS
Saturated Drain Current at VDS = 2 V, VGS = 0 V
mA
30
80
120
VP
Pinch Off Voltage at VDS = 2 V, ID = 100 µA
V
-2.0
-0.8
-0.2
gm
Transconductance at VDS = 2 V, ID = 5 mA
mS
30
IGSO
Gate to Source Leakage Current at VGS = -3 V
µA
0.5
10
RTH(CH-A)
Thermal Resistance (Channel to Ambient)
˚C/W
833
Note:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production
line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen.
California Eastern Laboratories