NE33284 Datasheet, PDF (1/5 Pages) California Eastern Labs – SUPER LOW NOISE HJ FET

SUPER LOW NOISE HJ FET NE33284A
FEATURES
• VERY LOW NOISE FIGURE:
0.8 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
• LOW COST METAL/CERAMIC PACKAGE
• TAPE & REEL PACKAGING OPTION AVAILABLE
DESCRIPTION
The NE33284A is a Hetero-Junction FET that uses the junction
between Si-doped AlGaAs and undoped InGaAs to create very
high mobility electrons. The device features mushroom shaped
TiAl gates for decreased gate resistance and improved power
handling capabilities. The mushroom gate also results in lower
noise figure and high associated gain. This device is housed in
an epoxy-sealed, metal/ceramic package and is intended for
high volume consumer and industrial applications.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
1.4
24
1.2
21
GA
1
18
0.8
15
0.6
12
0.4
9
NF
0.2
6
0
1
3
10
20
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT¹
GA¹
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH (CH-A)
RTH (CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Optimum Noise Figure, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz
f = 4 GHz
Associated Gain, VDS = 2.0 V, IDS = 10 mA, f = 12 GHz
f = 4 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2.0 V, IDS = 10 mA
VDS = 2.0 V, IDS = 20 mA
Gain at P1dB, f = 12 GHz
VDS = 2.0 V, IDS = 10 mA
VDS = 2.0 V, IDS = 20 mA
Saturated Drain Current, VDS = 2.0 V,VGS = 0 V
Pinch-off Voltage, VDS = 2.0 V, IDS = 0.1 mA
Transconductance, VDS = 2.0 V, ID = 10 mA
Gate to Source Leakage Current, VGS = -3.0 V
Thermal Resistance (Channel to Ambient)
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
°C/W
NE33284A
84AS
MIN
TYP
MAX
0.75
1.0
0.35
0.45
9.5
10.5
13.0
15.0
11.2
12.0
10.8
11.0
15
40
80
-2.0
-0.8
-0.2
45
70
0.5
10.0
630
280
310
Notes:
1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually
measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line
as a "go-no-go" screening tuned for the "generic" type but not for each specimen.
2. RTH (channel to case) for package mounted on an infinite heat sink.
California Eastern Laboratories