NE23383 Datasheet, PDF (1/3 Pages) California Eastern Labs – SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ FET

SUPER LOW NOISE AMPLIFIER
N-CHANNEL HJ FET NE23383B
(SPACE QUALIFIED)
FEATURES
• SUPER LOW NOISE FIGURE:
NF = 0.35 dB TYP at f = 4 GHz
• HIGH ASSOCIATED GAIN:
GA = 15.0 dB TYP at f = 4 GHz
• GATE LENGTH = LG = 0.3 µm
• GATE WIDTH = WG = 280 µm
• HERMETIC SEALED CERAMIC PACKAGE
• HIGH RELIABILITY
DESCRIPTION
The NE23383B is a heterojunction FET that utilizes the
heterojunction to create high mobility electrons. The device
features mushroom shaped gate for decreased gate resis-
tance and improved power handling capabilities. The mush-
room gate structure also results in low noise figure and high
associated gain. The device is housed in a rugged hermeti-
cally sealed metal ceramic stripline package selected for
industrial and space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
OUTLINE DIMENSIONS (Units in mm)
PACKAGE OUTLINE 83B
1.88 ± 0.3
1
1.88 ± 0.3 2
0.5 ± 0.1
4
3
1.0 ± 0.1
4.0 MIN (ALL LEADS)
1.45 MAX
0.1+-00..0073
APPLICATION
• BEST SUITED FOR LOW NOISE AMPS STAGE AT
C AND X BAND
ELECTRICAL CHARACTERISTICS (TA = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
NF
Noise Figure at VDS = 2 V, ID = 10 mA, f = 4 GHz
GA
Associated Gain at VDS = 2 V, ID = 10 mA, f = 4 GHz
IDSS
Saturated Drain Current at VDS = 2 V, VGS = 0 V
VGS(off)
Gate to Source Cut off Voltage at VDS = 2 V, ID = 100 µA
gM
Transconductance at VDS = 2 V, ID = 10 mA
IGDO
Gate to Drain Leakage Current at VGD = -3 V
IGSO
Gate to Source Leakage Current at VGS = -3 V
NE23383B
UNITS
MIN
dB
dB
13.0
mA
15
V
-0.2
ms
45
µA
µA
TYP
MAX
0.35
0.45
15.0
40
80
-0.8
-2.0
70
0.5
10
0.5
10
California Eastern Laboratories