NE23300 Datasheet, PDF (1/5 Pages) NEC – SUPER LOW NOISE HJ FET (SPACE QUALIFIED)

SUPER LOW NOISE HJ FET
(SPACE QUALIFIED)
NE23300
FEATURES
• VERY LOW NOISE FIGURE:
0.75 dB typical at 12 GHz
• HIGH ASSOCIATED GAIN:
10.5 dB Typical at 12 GHz
• GATE LENGTH: 0.3 µm
• GATE WIDTH: 280 µm
DESCRIPTION
The NE23300 is a Hetero-Junction FET chip that utilizes the
junction between Si-doped AlGaAs and undoped InGaAs to
create a two-dimensional electron gas layer with very high
electron mobility. Its excellent low noise figure and high asso-
ciated gain make it suitable for space applications.
NEC's stringent quality assurance and test procedures assure
the highest reliability and performance.
NOISE FIGURE & ASSOCIATED
GAIN vs. FREQUENCY
VDS = 2 V, IDS = 10 mA
4.5
4.0
GA
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
1
10
Frequency, f (GHz)
22
20
18
NF
16
14
12
10
8
6
40
ELECTRICAL CHARACTERISTICS (TA = 25°C)
SYMBOLS
NFOPT¹
GA¹
P1dB
G1dB
IDSS
VP
gm
IGSO
RTH(CH-C)2
PART NUMBER
PACKAGE OUTLINE
PARAMETERS AND CONDITIONS
Noise Figure, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
Associated Gain, VDS = 2 V, ID = 10 mA,
f = 4 GHz
f = 12 GHz
Output Power at 1 dB Gain Compression Point, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Gain at P1dB, f = 12 GHz
VDS = 2 V, IDS = 10 mA
VDS = 2 V, IDS = 20 mA
Saturated Drain Current, VDS = 2 V, VGS = 0 V
Pinch-off Voltage, VDS = 2 V, ID = 100 µA
Transconductance, VDS = 2 V, ID = 10 mA
Gate to Source Leakage Current, VGS = -5 V
Thermal Resistance (Channel to Case)
UNITS
dB
dB
dB
dB
dBm
dBm
dB
dB
mA
V
mS
µA
°C/W
MIN
10.0
15
-2.0
45
NE23300
00 (Chip)
TYP
0.35
0.75
15.0
10.5
11.2
12.0
11.8
12.8
40
-0.8
70
0.5
MAX
1.0
80
-0.2
10
260
Notes:
1. RF performance is determined by packaging and testing 10 samples per wafer. Wafer rejection criteria for standard devices is 2 rejects for
10 samples.
2. Chip mounted on infinite heat sink.
California Eastern Laboratories