NE202930 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon NPN Epitaxial High Frequency Transistor

A Business Partner of Renesas Electronics Corporation.
Preliminary
NE202930
Silicon NPN Epitaxial High Frequency Transistor
Data Sheet
R09DS0003EJ0100
Rev.1.00
Jul 14, 2010
FEATURES
• High transition frequency f_T = 11 GHz TYP.
• Ideal for low noise and low distortion amplification
• Suitable for equipments of low collector voltage (Less than 5 V)
• Suitable for up to 1 GHz applications
APPLICATIONS
• LNA (Low Noise Amplifier) or power splitter for digital-TV
OUTLINE
RENESAS Package code: 30
(Package name: 3-pin super minimold (30 PKG))
1. Emitter
2. Base
3. Collector
Note: Marking is "R7D"
ORDERING INFORMATION
Part Number Order Number
Package
Marking
Supplying Form
NE202930-T1
NE202930-T1-A
3-pin super
minimold (30 PKG)
(Pb-Free)
R7D • Embossed tape 8 mm wide
• Pin 3 face the perforation side of the tape
• Qty 3 kpcs/reel
Remark To order evaluation samples, please contact your nearby sales office.
Part number for sample order: NE202930-A
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
(Base Short)
Collector to Emitter Voltage
(Base Open)
Emitter to Base Voltage
Collector Current
Total Power Dissipation ^Note
Junction Temperature
Storage Temperature
Note: Free air
Symbol
V_CBO
V_CES
V_CEO
V_EBO
IC
P_tot
T_j
T_stg
Ratings
9
9
6
2
100
150
150
−65 to +150
Unit
V
V
V
V
mA
mW
°C
°C
CAUTION
Observe precautions when handling because these devices are sensitive to electrostatic discharge.
R09DS0003EJ0100 Rev.1.00
Jul 14, 2010
Page 1 of 6