NE021 Datasheet, PDF (1/12 Pages) List of Unclassifed Manufacturers – NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

NEC's NPN SILICON HIGH NE021
FREQUENCY TRANSISTOR SERIES
FEATURES
• HIGH INSERTION GAIN: 18.5 dB at 500 MHz
• LOW NOISE FIGURE: 1.5 dB at 500 MHz
• HIGH POWER GAIN: 12 dB at 2 GHz
• LARGE DYNAMIC RANGE: 19 dBm at 1 dB,
2 GHz Gain Compression
E
B
DESCRIPTION
NEC's NE021 series of NPN silicon transistors provides eco-
nomical solutions to wide ranges of amplifier and oscillator
problems. Low noise and high current capability provide low
intermodulation distortion. The NE021 series is available as a
chip or in several package styles. The series uses the NEC gold,
platinum, titanium, and platinum-silicide metallization system to
provide the utmost in reliability. NE02107 is available in both
common-base and common-emitter configurations and has
been qualified for high-reliability space applications.
NE02135
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 5 mA
500
1.2 18.60
1000
1.5 13.82
1500
2.0 11.83
2000
2.4
9.36
2500
2.6
7.82
3000
3.6
7.51
3500
3.7
6.31
VCE = 10 V, IC = 20 mA
500
1.8 21.32
1000
1.9 16.15
1500
2.4 13.50
2000
2.9 11.02
2500
3.2
9.12
3000
3.9
8.10
3500
4.3
6.48
ΓOPT
MAG ANG
.36
69
.31
124
.50
165
.44
-175
.52
-161
.68
-141
.71
-139
.16
149
.33
169
.46
-179
.53
-167
.57
-154
.62
-139
.67
-134
Rn/50
.14
.12
.05
.06
.10
.14
.21
.15
.13
.09
.08
.14
.27
.42
00 (CHIP)
07/07B
33 (SOT 23 STYLE)
35 (MICRO-X)
39 (SOT 143 STYLE)
NE02139
TYPICAL NOISE PARAMETERS (TA = 25°C)
FREQ.
(MHz)
NFOPT
(dB)
GA
(dB)
VCE = 10 V, IC = 20 mA
500
1.8
17.5
1000
2.1
12.5
1500
2.3
9.5
2000
2.6
7.5
ΓOPT
MAG ANG
0.11
156
0.27
168
0.36 -156
0.43 -147
Rn/50
.20
.16
.18
.21
PLEASE NOTE:
The following part numbers from this datasheet are nonpromotive:
NE02100
NE02133
NE02139
The following part numbers from this datasheet are discontinued:
NE02107
NE02135
Please call sales office for details.
California Eastern Laboratories