NDL5551P_00 Datasheet, PDF (1/5 Pages) California Eastern Labs – 1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE

1000 to 1600 nm OPTICAL
FIBER COMMUNICATIONS φ50 µm InGaAs
AVALANCHE PHOTO DIODE MODULE
NDL5551P
SERIES
FEATURES
• SMALLER DARK CURRENT:
ID = 5 nA
• HIGH QUANTUM EFFICIENCY:
η = 90% at λ = 1300 nm, M = 1
η = 77% at λ = 1550 nm, M = 1
• HIGH SPEED RESPONSE:
fC = 1.2 GHz @ M = 20
• DETECTING AREA SIZE:
φ 50 µm
• COAXIAL MODULE WITH MULTIMODE FIBER:
GI-50/125
DESCRIPTION
The NDL5551P Series are InGaAs PIN photo diode modules
with multimode fiber. They are designed for detectors of long
wavelength transmission systems and cover the wavelength
range setween 1000 and 1600 nm.
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
SYMBOLS
V(BR)R
δ¹
ID
IDM
Ct
fC
η
S
M
PARAMETERS AND CONDITIONS
Reverse Breakdown Voltage, ID =100 µA
Temperature Coefficient of Reverse Breakdown Voltage
Dark Current, VR = V(BR)R x 0.9
Multiplied Dark Current, M = 2 to 10
Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz
Cut-off Frequency, M = 10
M = 20
Quantum Efficiency, λ = 1300 nm, M = 1
λ = 1550 nm, M = 1
Responsivity, λ = 1300 nm
λ = 1550 nm
Multiplication Factor, λ = 1300 nm, IPO = 1.0 µA
VR = V (@ID = 1 µA)
x
Excess Noise Exponent, λ = 1300 nm, 1550 nm,
IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
F
Excess Noise Factor, λ = 1300 nm, 1550 nm,
IPO =1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
Note:
1. δ = ^{V(BR)R < 25°C + ∆T°C > - V(BR)R <25°C>}
∆T°C • V(BR)R <25°C>
UNITS
V
%/ºC
nA
nA
pF
GHz
%
A/W
NDL5551P Series
MIN
TYP
MAX
50
70
100
0.2
5
30
1
5
0.4
0.75
1
1.5
1.2
76
90
65
77
0.8
0.94
0.81
0.96
30
40
0.7
5
California Eastern Laboratories