NDL5531P_00 Datasheet, PDF (1/5 Pages) California Eastern Labs – 1000 to 1600 nm OPTICAL FIBER COMMUNICATIONS 30um InGaAs AVALANCHE PHOTO DIODE MODULE

1000 to 1600 nm OPTICAL
FIBER COMMUNICATIONS φ30 µm InGaAs
NDL5531P
SERIES
AVALANCHE PHOTO DIODE MODULE
FEATURES
• SMALL DARK CURRENT:
ID = 5 nA
• SMALL TERMINAL CAPACITANCE:
CT = 0.35 pF at 0.9 V(BR)R
• HIGH QUANTUM EFFICIENCY:
η = 90% at λ = 1 300 nm, M = 1
η = 77% at λ = 1 550 nm, M = 1
• HIGH SPEED RESPONSE:
fc = 2.5 GHz at M = 10
• DETECTING AREA SIZE:
φ30 µm
• COAXIAL MODULE WITH SINGLE MODE FIBER
(SM-9/125)
DESCRIPTION
The NDL5531P Series is an InGaAs avalanche photo diode
module with single mode fiber. It is designed for detectors of
long wavelength transmission systems. The series covers the
wavelength range between 1000 and 1600 nm.
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
V(BR)R
Reverse Breakdown Voltage, ID = 100 µA
V
δ
Temperature Coefficient of Reverse Breakdown
Voltage¹
%/°C
ID
Dark Current, VR = V(BR)R x 0.9
nA
IDM
Multiplied Dark Current, M = 2 to 10
nA
Ct
Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz
pF
fC
Cut-off Frequency, M = 10
GHz
η
Quantum Efficiency, λ = 1 300 nm, M = 1
%
λ = 1 550 nm, M = 1
S
Responsivity, λ = 1 300 nm, M = 1
A/W
λ = 1 550 nm, M = 1
M
Multiplication Factor, λ = 1 300 nm, IPO = 1.0 µA,
VR = V (at ID = 1 µA)
M
X
Excess Noise Factor², λ = 1 300 nm, 1 550 nm,
F
IPO = 1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
V(BR)R < 25°C + ∆T°C > - V(BR)R < 25°C>
Note: 1. δ =
∆T°C > - V(BR)R < 25°C>
2. F = M^X
NDL5531P Series
MIN
TYP
MAX
50
70
100
0.2
5
25
1
5
0.35
0.60
2.5
76
90
65
77
0.80
0.94
0.81
0.96
30
40
0.7
5
California Eastern Laboratories