NDL5521P Datasheet, PDF (1/3 Pages) California Eastern Labs – 2.5 Gb/s OPTICAL FIBER COMMUNICATIONS 50 um InGaAs AVALANCHE PHOTO DIODE MODULE WITH MMF

2.5 Gb/s OPTICAL FIBER
COMMUNICATIONS φ50 µm
InGaAs AVALANCHE PHOTO
DIODE MODULE WITH MMF
NDL5521P
SERIES
FEATURES
• SMALL DARK CURRENT:
ID = 5 nA
• HIGH QUANTUM EFFICIENCY:
η = 90% at λ = 1300 nm, M = 1
η = 77% at λ = 1550 nm, M = 1
• HIGH SPEED RESPONSE:
fc = 2.5 GHz at M = 10
• DETECTING AREA SIZE:
φ50 µm
• COAXIAL MODULE WITH MULTIMODE FIBER
(GI-50/125)
• NDL5521P1 AND NDL5521P2 HAVE A FLANGE
DESCRIPTION
The NDL5521P Series are InGaAs avalanche photo diode
modules with multimode fiber.They are designed for 2.5 Gb/s
optical fiber communication systems and cover the wave-
length range between 1000 and 1600 nm with high efficiency.
These modules are also available with FC-PC connector and
SC-PC connector.
ELECTRO-OPTICAL CHARACTERISTICS (TC = 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
UNITS
V(BR)R
Reverse Breakdown Voltage, ID = 100 µA
V
δ
Temperature Coefficient of Reverse Breakdown
Voltage¹
%/°C
ID
Dark Current, VR = V(BR)R x 0.9
nA
IDM
Multiplied Dark Current, M = 2 to 10
nA
Ct
Terminal Capacitance, VR = V(BR)R x 0.9, f = 1 MHz
pF
fC
Cut-off Frequency, M = 5
M = 10
M = 30
GHz
η
Quantum Efficiency, λ = 1300 nm, M = 1
%
λ = 1550 nm, M = 1
S
Responsivity, λ = 1300 nm, M = 1
A/W
λ = 1550 nm, M = 1
M
Multiplication Factor, λ = 1550 nm, IPO = 1.0 µA,
M
VR = V (at ID = 1 µA)
X
Excess Noise Factor, λ = 1300 nm, 1550 nm,
F
IPO = 1.0 µA, M = 10, f = 35 MHz, B = 1 MHz
ORL
Optical Return Loss
dB
V(BR)R < 25°C + ∆T°C > - V(BR)R < 25°C>
Note: 1. δ =
∆T°C • V(BR)R < 25°C>
NDL5521P Series
MIN
TYP
MAX
40
55
80
0.20
5
30
0.50
5
0.40
0.75
2.5
2.5
3.0
1.0
76
90
65
77
0.80
0.94
0.81
0.96
30
40
0.7
5
30
California Eastern Laboratories