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CE3512K2 Datasheet, PDF (1/8 Pages) California Eastern Labs – 12 GHz Super Low Noise FET in Hollow Plastic PKG
RF Low Noise FET
CE3512K2
12 GHz SupEenrteLroawShNorot iDsoecuFmEeTnti/nTitHleoNllaomwe HPelarestic PKG
DESCRIPTION
 Super Low Noise and High Gain
 Hollow (Air Cavity) Plastic package
FEATURES
 Super Low noise figure and high associated gain:
NF = 0.30 dB TYP., Ga = 13.7 dB TYP.
@VDS = 2 V, ID = 10 mA, f = 12 GHz
PACKAGE
 Micro-X plastic package
APPLICATIONS
 DBS LNB gain-stage, Mix-stage
 Low noise amplifier for microwave
communication systems
ORDERING INFORMATION
Part Number
Order Number
CE3512K2
CE3512K2-C1
Package
Micro-X plastic
package
Marking
C5
Description
• Embossed tape 8 mm wide
• Pin 4 (Gate) faces the
perforation side of the tape
• MOQ 10 kpcs/reel
This document is subject to change without notice.
Date Published: July 2016
CDS-0018-05 (Issue A)
1