2SC5015 Datasheet, PDF (1/7 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
NPN SILICON RF TRANSISTOR
NE68518
/
2SC5015 JEITA
Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD (18)
FEATURES
• High fT: fT = 12 GHz TYP. @ VCE = 3 V, IC = 10 mA, f = 2 GHz
• Low noise and high gain
• Low voltage operation
• 4-pin super minimold (18) package
ORDERING INFORMATION
Part Number
NE68518-A
2SC5015-A
NE68518-T1-A
2SC5015-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
9
V
Collector to Emitter Voltage
VCEO
6
V
Emitter to Base Voltage
VEBO
2
V
Collector Current
IC
30
mA
Total Power Dissipation
Ptot
150
mW
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
−65 to +150
°C
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10403EJ01V0DS (1st edition)
(Previous No. P10394EJ2V0DS00)
Date Published June 2003 CP(K)
The mark shows major revised points.