2SC5013 Datasheet, PDF (1/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

DATA SHEET
NPN SILICON RF TRANSISTOR
NE68018
/
2SC5013 JEITA
Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• High Gain Bandwidth Product (fT = 10 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-pin super minimold Package
ORDERING INFORMATION
Part Number
NE68018-A
2SC5013-A
NE68018-A
2SC5013-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
IC
P ^Note
tot
Tj
Tstg
35
150
150
−65 to +150
mA
mW
°C
°C
Note Free air
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Document No. PU10518EJ01V0DS (1st edition)
(Previous No. P10401EJ2V0DS00)
Date Published August 2004 CP(K)
The mark  shows major revised points.