2SC5011 Datasheet, PDF (1/6 Pages) NEC – HIGH FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR 4 PINS SUPER MINI MOLD

NPN SILICON RF TRANSISTOR
NE85618
/
2SC5011
JEITA
Part No.
NPN EPITAXIAL SILICON RF TRANSISTOR
FOR HIGH-FREQUENCY LOW-NOISE AMPLIFICATION
4-PIN SUPER MINIMOLD
FEATURES
• High Gain Bandwidth Product (fT = 6.5 GHz TYP.)
• Low Noise, High Gain
• Low Voltage Operation
• 4-pin super mini mold Package
ORDERING INFORMATION
Part Number
NE85618-A
2SC5011-A
NE85618-T1-A
2SC5011-T1-A
Quantity
50 pcs (Non reel)
3 kpcs/reel
Supplying Form
• 8 mm wide embossed taping
• Pin 3 (Base), Pin 4 (Emitter) face to perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
Ptot ^Note
Tj
Tstg
Ratings
20
12
3
100
150
150
65 to +150
Unit
V
V
V
mA
mW
C
C
Note Free air
Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
Document No. PU10515EJ01V0DS (1st edition)
(Previous No. P10399EJ2V0DS00)
Date Published August 2004 CP(K)
The mark  shows major revised points.