2SC5008 Datasheet, PDF (1/9 Pages) NEC – NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD

DATA SHEET
SILICON TRANSISTOR
NE68019
/
2SC5008 JEITA
Part No.
NPN SILICON EPITAXIAL TRANSISTOR
3 PINS ULTRA SUPER MINI MOLD
DESCRIPTION
The NE68019 / 2SC5008 is an NPN epitaxial silicon transistor
designed for use in low noise and small signal amplifiers from VHF
band to L band. Low noise figure, high gain, and high current
capability achieve a very wide dynamic range and excellent linearity.
This is achieved by direct nitride passivated base surface, process
(NEST2 process) which is a proprietary fabrication technique.
FEATURES
• Low Voltage Use.
• High fT: 8.0 GHz TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Low Cre: 0.3 pF TYP. (@ VCE = 3 V, IE = 0, f = 1 MHz)
• Low NF: 1.9 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• High |S21e|²: 7.5 dB TYP. (@ VCE = 3 V, IC = 5 mA, f = 2 GHz)
• Ultra Super Mini Mold Package.
ORDERING INFORMATION
PART
NUMBER
QUANTITY
NE68019-A
2SC5008-A
50 pcs./Unit
NE68019-T-A 3 kpcs./Reel
2SC5008-T-A
PACKING STYLE
Embossed tape 8 mm wide.
Pin3 (Collector) face to perforation side
of the tape.
PACKAGE DIMENSIONS
in millimeters
1.6 ± 0.1
0.8 ± 0.1
2
3
1
1. Emitter
2. Base
3. Collector
* To order evaluation samples, please contact your nearby sales office.
Unit sample quantity shall be 50 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
125 mW
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg –65 to + 150 ˚ C
Document No. P10387EJ2V0DS00 (2nd edition)
(Previous No. TD-2433)
Date Published July 1995 P