2SC4536 Datasheet, PDF (1/10 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

NE46100 / NE46134
NPN MEDIUM POWER MICROWAVE TRANSISTOR
FEATURES
• HIGH DYNAMIC RANGE
• LOW IM DISTORTION: -40 dBc
• HIGH OUTPUT POWER : 27.5 dBm at TYP
• LOW NOISE: 1.5 dB TYP at 500 MHz
• LOW COST
DESCRIPTION
The NE461 series of NPN silicon epitaxial bipolar transis-
tors is designed for medium power applications requiring high
dynamic range. This device exhibits an outstanding combina-
tion of high gain and low intermodulation distortion, as well as
low noise figure. The NE461 series offers excellent perfor-
mance and reliability at low cost through titanium,
platinum, gold metallization system and direct nitride passiva-
tion of the surface of the chip. Devices are available in a low
cost surface mount package (SOT-89) as well as in chip form.
30.0
28.0
26.0
24.0
22.0
20.0
18.0
16.0
14.0
12.0
5
NE46134
TYPICAL OUTPUT POWER
vs. INPUT POWER
f = 1.0 GHz, IC = 100 mA
12.5 V
10 V
5V
10
15
20
25
Input Power, PIN (dBm)
ELECTRICAL CHARACTERISTICS (TA = 25 C)
PART NUMBER
EIAJ¹ REGISTERED NUMBER
PACKAGE OUTLINE
SYMBOLS
PARAMETERS AND CONDITIONS
fT
NFMIN
Gain Bandwidth Product at VCE = 10 V, IC = 100 mA
Minimum Noise Figure³ at VCE = 10 V, IC = 50 mA, 500 MHz
VCE = 10 V, IC = 50 mA, 1 GHz
GL
|S21E|²
hFE
Linear Gain, VCE = 12.5 V, IC = 100 mA, 2.0 GHz
VCE = 12.5 V, IC = 100 mA, 1.0 GHz
Insertion Power Gain at 10 V, 50 mA, f = 1.0 GHz
DC Current Gain² at VCE = 10 V, IC = 50 mA
ICBO
Collector Cutoff Current at VCB = 20 V, IE = 0 mA .
IEBO
Emitter Cutoff Current at VEB = 2 V, IC = 0 mA
P1dB
Output Power at 1 dB Compression, VCE = 12.5 V, IC = 100 mA, 2.0 GHz
VCE = 12.5 V, IC = 100 mA, 1.0 GHz
IM3
Intermodulation Distortion, 10 V, 100 mA, F1 = 1.0 GHz, F2 = 0.99 GHz,
Total POUT = 20 dBm
RTH (J-C)
Thermal Resistance (Junction to Case)
RTH (J-A)
Thermal Resistance (Junction to Ambient)
Notes:
1. Electronic Industrial Association of Japan.
2. Pulsed: PW 350 ms, Duty Cycle 2%
3. RS = RL = 50 untuned
UNITS
GHz
dB
dB
dB
dB
dB
A
A
dBm
dBm
NE46100
00 (CHIP)
NE46134
2SC4536
34
MIN TYP MAX MIN TYP MAX
5.5
5.5
1.5
1.5
2.0
2.0
9.0
8.0
10.0
5.5 7.0
40
200 40
200
5.0
5.0
5.0
5.0
27.0
27.5
dBc
C/W
C/W
-40.0
-40.0
30
32.5
312.5