2SC3585 Datasheet, PDF (1/5 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68033
/
2SC3585 JEITA
Part No.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISOR
DESCRIPTION
The NE68033 / 2SC3585 is an NPN epitaxial silicon transistor designed
for use in low-noise and small signal amplifiers from VHF band to UHF
band. The NE68033 / 2SC3585 features excellent power gain with very
low-noise figures. The NE68033 / 2SC3585 employs direct nitride
passivated base surface process (DNP process) which is a proprietary
new fabrication technique which provides excellent noise figures at
high current values. This allows excellent associated gain and very
wide dynamic range.
FEATURES
• NF
1.8 dB TYP.
• Ga
9 dB TYP.
@f = 2.0 GHz
@f = 2.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
35
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
ELECTRICAL CHARACTERISTICS (TA = 25
C)
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
CHARACTERISTIC
SYMBOL MIN. TYP. MAX. UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0

A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0

A VEB = 1 V, IC = 0
DC Current Gain
hFE *
50
100
250
VCE = 6 V, IC = 10 mA
Gain Bandwidth Product
fT
10
GHz VCE = 6 V, IC = 10 mA
Feed-Back Capacitance
Insertion Power Gain
Cre **
0.3
0.8
pF VCB = 10 V, IE = 0, f = 1.0 MHz

S21e
²
6.0
8.0
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Maximum Available Gain
MAG
10
dB VCE = 6 V, IC = 10 mA, f = 2.0 GHz
Noise Figure
NF
1.8
3.0
dB VCE = 6 V, IC = 5 mA, f = 2.0 GHz
* Pulse Measurement PW  350
s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R43/Q *
R44/R *
R45/S *
Marking
R43
R44
R45
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10361EJ4V1DS00 (4th edition)
Date Published March 1997 N