2SC3583 Datasheet, PDF (1/5 Pages) NEC – MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR

DDAATTAA SSHHEEEETT
SILICON TRANSISTOR
NE68133
/
2SC3583
JEITA
Part No.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
DESCRIPTION
The NE68133 / 2SC3583 is an NPN epitaxial silicon transistor
designed for use in low-noise and small signal amplifiers from VHF band
to UHF band. Low-noise figure, high gain, and high current capability
achieve a very wide dynamic range and excellent linearity. This is
achieved by direct nitride passivated base surface process (DNP
process) which is a proprietary new fabrication technique.
FEATURES
• NF
1.2 dB TYP.
• Ga
13 dB TYP.
@f = 1.0 GHz
@f = 1.0 GHz
PACKAGE DIMENSIONS
(Units: mm)
2.8±0.2
1.5
0.65
+0.1
−0.15
2
1
3
ABSOLUTE MAXIMUM RATINGS (TA = 25
C)
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
200
mW
Junction Temperature
Tj
150

C
Storage Temperature
Tstg
65 to +150
C
Marking
PIN CONNECTIONS
1. Emitter
2. Base
3. Collector
ELECTRICAL CHARACTERISTICS (TA = 25
C)
CHARACTERISTIC
SYMBOL MIN. TYP.
MAX.
UNIT
TEST CONDITIONS
Collector Cutoff Current
ICBO
1.0

A VCB = 10 V, IE = 0
Emitter Cutoff Current
IEBO
1.0

A VEB = 1 V, IE = 0
DC Current Gain
hFE *
50
100
250
VCE = 8 V, IC = 20 mA
Gain Bandwidth Product
fT
9
GHz VCE = 8 V, IC = 20 mA
Feed-Back Capacitance
Insertion Power Gain
Cre **
0.35
0.9

S21e
²
11
13
pF VCB = 10 V, IE = 0, f = 1.0 MHz
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Maximum Available Gain
MAG
15
dB VCE = 8 V, IC = 20 mA, f = 1.0 GHz
Noise Figure
NF
1.2
2.5
dB VCE = 8 V, IE = 7 mA, f = 1.0 GHz
* Pulse Measurement PW  350
s, Duty Cycle  2 %
** The emitter terminal and the case shall be connected to the gurad terminal of the three-terminal capacitance bridge.
hFE Classification
Class
R33/Q *
R34/R *
R35/S *
Marking
R33
R34
R35
hFE
50 to 100
80 to 160
125 to 250 * Old Specification / New Specification
Document No. P10360EJ4V1DS00 (4th edition)
Date Published March 1997 N