2SA1977 Datasheet, PDF (1/12 Pages) NEC – PNP EPITAXIAL SILICON TRANSISTOR MICROWAVE AMPLIFIER

DATA SHEET
Silicon Transistor
NE97733
/
2SA1977
JEITA
Part No.
PNP EPITAXIAL SILICON TRANSISTOR
MICROWAVE AMPLIFIER
FEATURES
PACKAGE DIMENSION (in millimeters)
• _{High fT}
2.8+_0.2
fT = 8.5 GHz TYP.
• _{High gain}
1.5
0.65
+0.1
–0.15
| S21e | ² = 12.0 dB TYP. @f = 1.0 GHz, VCE = −8 V, IC = −20 mA
• _{High-speed switching characterstics}
2
• _{Equivalent NPN transistor is the NE68133 / 2SC3583.}
ABSOLUTE MAXIMUM RATINGS (T_A = 25 °C)
1
3
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
Junction Temperature
Storage Temperature
Symbol
Rating
Unit
VCB0
VCE0
VEB0
IC
PT
Tj
Tstg
−20
V
−12
V
−3.0
V
−50
mA
200
mW
150
°C
−65 to +150
°C
ELECTRICAL CHARACTERISTICS (T_A = 25 °C)
Marking
PIN CONNECTIONS
1: Emitter
2: Base
3: Collector Marking; T92
Parameter
Symbol
Test Conditions
MIN. TYP. MAX.
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain Bandwidth Product
Collector Capacitance
Insertion Power Gain
Noise Figure
ICB0
VCB = −10 V
IEB0
VEB = −1 V
hFE
VCE = −8 V, IC = −20 mA
20
fT
VCE = −8 V, IC = −20 mA, f = 1 GHz
6.0
Cre*
VCB = −10 V, IE = 0, f = 1 MHz
| S21e | ² VCE = −8 V, IC = −20 mA, f = 1.0 GHz
8.0
NF
VCE = −8 V, IC = −3 mA, f = 1 GHz
−0.1
−0.1
100
8.5
0.5
1
12.0
1.5
3
* Mesured by a 3-terminal bridge. Emitter and Case should be connected to the guard terminal.
Unit
µA
µA
GHz
pF
dB
dB
h_FE Classification
Rank
Marking
hFE
FB
T92
20 to 100
Document No. P10925EJ1V0DS00 (1st edition)
Date Published April 1996 P