V Datasheet, PDF (2/4 Pages) Continental Device India Limited – SOT-23 Formed SMD Package

BCX17
BCX18
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
BCX17
BCX18
Collector–emitter voltage (V_BE = 0)
–V_CES max. 50
30 V
Collector–emitter voltage
–I_C = 10 mA (see Fig. 2)
–V_CE0 max. 45
25 V
Emitter–base voltage (open collector)
–V_EB0 max. 5
5V
Collector current (d.c.)
–I _C max.
500
mA
Collector current (peak value)
–I_CM max.
1000
mA
Emitter current (peak value)
IEM max.
1000
mA
Base current (d.c.)
–l_B max.
100
mA
Base current (peak value)
–I_BM max.
200
mA
Total power dissipation up to T_amb = 25 °C* P_tot max.
250
mW
Storage temperature
T_stg
–55 to +150 ° C
Junction temperature
T_j
max.
150
°C
THERMAL RESISTANCE
From junction to ambient
R_{th j–a} = 500 K/W
CHARACTERISTICS
T_j = 25 °C unless otherwise specified
Collector cut–off current
I_{E =} 0; –V_CB = 20 V
I_E = 0; –V_CB = 20V; T_j = 150°C
Emitter cut–off current
I_C = 0; –V_EB = 5V
Base–emitter voltage ·
—I_C = 500 mA; –V_CE = 1 V
Saturation voltage
–I_C = 500 mA; –l_B = 50 mA
D.C. current gain
–I_C = 100 mA; –V_CE = 1 V
–I_C = 300 mA; –V_CE = 1 V
–I_C = 500 mA; –V_CE = 1 V
Transition frequency at f = 35 MHz
–I_C = 10 mA; –V_CE = 5 V
Collector capacitance at f = 1 MHz
I_E = I_e = 0; –V_CB = 10 V
–I_CB0 <
–I_CB0 <
–I_EB0 <
–V_BE <
–V_CEsat <
h_FE
h_FE >
h_FE >
f_T
typ.
C_c
typ.
100
nA
5
µA
10
µA
1,2
V
620
mV
100 to 600
70
40
100
MHz
8
pF
Continental Device India Limited
Data Sheet
Page 2 of 4