TIP29 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(1.0A,40-100V,30W)

PLASTIC POWER TRANSISTORS
TIP29, A, B, C NPN
TIP30, A, B, C PNP
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Voltage
Collector Cut off Current
*V_CEO(sus)
I_CEO
I_C=30mA, I_B=0
TIP29/30
TIP29A/30A
TIP29B/30B
TIP29C/30C
V_CE=30V, I_B=0
TIP29, A / 30, A
V_CE=60V, I_B=0
TIP29B, C / 30B, C
Collector Cut off Current
I_CES
V_CE=V_CEO(max), V_BE=0
Emitter Cut off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
Collector Emitter Saturation
Voltage
*h_FE
*V_{CE (sat)}
I_C=0.2A, V_CE=4V
I_C=1A, V_CE=4V
I_C=1A, I_B=125mA
Base Emitter on Voltage
*V_BE(on)
*Pulse Test : Pulse width <300µs, Duty Cycle <2%
I_C=1A, V_CE=4V
DYNAMIC CHARACTERISTIC
DESCRIPTION
Small Signal Current Gain
Transition Frequency
SYMBOL
h_fe
f_T
TEST CONDITION
I_C=0.2A, V_CE=10V, f=1KHz
I_C=0.2A, V_CE=10V, f=1MHz
SWITCHING CHARACTERISTICS
DESCRIPTION
Turn On Time
Turn Off Time
SYMBOL
t_on
t_off
TEST CONDITION
V_cc=30V, I_c=2A, I_B1=I_B2=0.2A
MIN
MAX
UNIT
40
V
60
V
80
V
100
V
0.3
mA
0.3
mA
0.2
mA
1.0
mA
40
15
75
0.7
V
1.3
V
MIN
MAX
UNIT
20
3
MHz
TYP
UNIT
0.43
µs
1.0
µs
Continental Device India Limited
Data Sheet
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