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| CSB631 Datasheet, PDF (2/3 Pages) Continental Device India Limited – PNP PLASTIC POWER TRANSISTORS | |||
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CSB631, CSB631K
CSD600, CSD600K
Emitter-base voltage (open collector)
Collector current
Collector current (peak)
Total power dissipation up to TA = 25°C
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
VEBO
IC
ICP
PC
PC
Tj
Tstg
Collector cutoff current
IE = 0; VCB = 50 V
Emitter cut-off current
IC = 0; VEB = 4 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 10 µA; IE = 0
IE = 10 µA; IC = 0
Saturation voltages
IC = 500 mA; IB = 50 mA
D.C. current gain
IC = 50 mA; VCE = 5 V
ICBO
IEBO
VCEO
VCBO
VEBO
VCEsat
VBEsat
hFE*
IC = 500 mA; VCE = 5 V
hFE
Transition frequency
IC = 50 mA; VCE = 10 V
PNP
fT
NPN
Output capacitance
VCB = 10 V; IE = 0; f = 1 MHz PNP
Cob
NPN
Cob
* hFE classification: D60 - 120, E = 100 - 200, F 160 - 320
631
631K
600
600K
max.
5.0 V
max.
1.0 A
max.
2.0 mA
max.
1.0 W
max.
8.0 W
max.
150 ºC
â65 to +150 ºC
631
631K
600
600K
max.
1.0 µA
max.
1.0 µA
min. 100 120 V
min. 100 120 V
min.
5.0 V
max.
max.
0.4 V
1.2 V
min.
60
max.
320
min.
20
typ.
110 MHz
typ.
130 MHz
typ.
30 pF
typ.
20 pF
Continental Device India Limited
Data Sheet
Page 2 of 3
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