CN650 Datasheet, PDF (2/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS
CN650 / CN651
TO-92
Plastic Package
EBC
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
Collector Emitter Saturation Voltage *** V_{CE (sat)}
I_C=1A, I_B=100mA
I_C=2A, I_B=200mA
Base Emitter Saturation Voltage
***V_{BE (sat)}
I_C=1A, I_B=100mA
Base Emitter on Voltage
*** V_{BE (on)}
I_C=1A, V_CE=2V
DC Current Gain
*** h_FE
I_C=50mA,V_CE=2V
I_C=500mA,V_CE=2V
Transition Frequency
Output Capacitance
I_C=1A, V_CE=2V
I_C=2A, V_CE=2V
f_T
I_C=100mA, V_CE=5V, f=100MHz
C_obo
V_CB=10V, I_E=0, f=1MHz
SWITCHING TIMES
DESCRIPTION
SYMBOL TEST CONDITION
Turn On Time
Turn Off Time
t_on
I_C=500mA, I_B1=50mA
t_off
I_B2=50mA, V_CC=10V
***Measured under Pulse Conditions. Pulse Width=300µs. Duty Cycle<2%
CN650_651Rev_2 211204E
MIN MAX
0.3
0.5
1.25
1.0
70
100 300
80
40
140
30
TYP
45
800
UNIT
V
V
V
V
MHz
pF
UNIT
ns
ns
Continental Device India Limited
Data Sheet
Page 2 of 5