CMMT591 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL TRANSISTORS

CMMT591
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Emitter-base voltage (open collector)
Collector current
Peak Pulse current
Base current
Total power dissipation at T_amb = 25°C
Storage temperature
Junction temperature
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_stg
T_j
max. 80 V
max. 60 V
max.
5V
max.
1A
max.
2A
max. 200 mA
max. 500 mW
-55 to +150 ° C
max. 150 ° C
CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Collector cut-off current
I_E = 0; V_CB = 60 V
I_CBO
V_BE = 0; V_CE = 60 V
I_CES
max.
max.
100 nA
100 nA
Emitter cut-off current
V_EB = 4 V; I_C = 0
I_EBO max. 100 nA
Breakdown voltages
I_C = 10 mA; I_B = 0
I_C = 100 µA; I_E = 0
I_E = 100 µA; I_C = 0
V_CEO
V_CBO
V_EBO
min.
min.
min.
60 V
80 V
5V
Base-emitter voltage
I_C = 1 A; V_CE = 5 V
V_BE* max.
1V
Saturation voltage
I_C = 500 mA; I_B = 50 mA
I_C = 1 A; I_B = 100 mA
I_C = 1 A; I_B = 100 mA
V_CEsat*
V_BEsat*
max.
max.
max.
300 mV
600 mV
1.2 V
D.C. current gain
I_C = 1 mA; V_CE = 5 V
I_C = 500 mA; V_CE = 5 V*
I_C = 1 A; V_CE = 5 V*
I_C = 2 A; V_CE = 5 V*
h_FE
min. 100
min. 100
max. 300
min.
80
min.
15
Collector capacitance at f = 1 MHz
I_E = 0; V_CB = 10 V
C_ob
max. 10 pF
Transition frequency at f = 100 MHz
I_C = 50 mA; V_CE = 10 V
f_T
min. 150 MHz
* Measured under pulsed conditions: Pulse width = 300 µs, duty cycle = 2%.
Continental Device India Limited
Data Sheet
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