CMBTA13 Datasheet, PDF (2/3 Pages) Rectron Semiconductor – NPN Small-Signal Darlington Transistors

CMBTA13
CMBTA14
RATINGS (at T_A = 25°C unless otherwise specified)
Limiting values
Collector–base voltage (open emitter)
V_BE = 0
Collector–emitter voltage (open base)
V_BE = 0
Emitter–base voltage (open collector)
Collector current (d.c.)
Total power dissipation up to T_amb = 25°C
Storage temperature
Junction temperature
V_CBO
V_CES
V_EBO
I_C
P_tot
T_stg
T_j
max. 30 V
max. 30 V
max. 10 V
max. 300 mA
max. 250 mW
–55 to +150 °C
max. 150 °C
THERMAL RESISTANCE
from junction to ambient
R_{th j–a}
500 K/W
CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
I_C = 100 µA
Emitter–base cut–off current
V_(BR)CES
V_BE = 10 V
Collector–base cut–off current
I_EBO
V_CB = 30 V
I_CBO
min.
max.
max.
30 V
0.1 µA
0.1 µA
D.C. current gain
I_C = 10 mA; V_CE = 5 V
I_C = 100 mA; V_CE = 5 V
Collector–emitter saturation voltage
IC = 100 mA; I_B = 0.1 mA
Base–emitter On voltage
I_C = 100 mA; V_CE = 5 V;
Transition frequency at f = 100 MHz
I_C = 10 mA; V_CE = 5 V
CMBTA13 h_FE
CMBTA14 h_FE
CMBTA13 h_FE
CMBTA14 h_FE
min. 5000
min. 10000
min. 10000
min. 20000
V_CEsat
V_BE(on)
f_T
max.
max.
min.
1.5 V
2V
125 MHz
Continental Device India Limited
Data Sheet
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