CMBT8598 Datasheet, PDF (2/3 Pages) Continental Device India Limited – GENERAL PURPOSE TRANSISTOR

CMBT8598
CMBT8599
Total power dissipation at T_amb = 25°C P_tot
Storage temperature
Junction temperature
max
225
mW
T_stg
–55 to +150 ° C
Tj
max.
150 ° C
THERMAL CHARACTERISTICS
T_j = P (R_{th j–t} + R_{th s–a}) + T_amb
Thermal resistance
from junction to ambient
R_{th j–a}
556
°C/mW
CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I_C = 1 mA; –I_E = 0
Collector–base breakdown voltage
–V_(BR)CEO min. 60
–I_C = 10 mA; –I_E = 0
Emitter–base breakdown voltage
–V_(BR)CBO min. 60
–I_E = 10 mA; –I_C = 0
Collector cut–off current
–V_(BR)EBO min. 5
–V_CB = 20 V; –I_E = 0
Emitter cut–off current
–I_CBO
max. 50
–V_BE = 3 V; –I_C = 0
Output capacitance at f = 100 kHz
–I_EBO
max. 50
I_E = 0; –V_CB = 5 V
C_c
max. 4.5
Input capacitance at f = 100 kHz
I_C = 0; –V_BE = 0.5 V
C_e
max. 30
80 V
80 V
5V
50 nA
50 nA
4.5 pF
30 pF
Saturation voltages
–I_C = 100 mA; –I_B = 5 mA
Base emitter voltage
IC = 1 mA; VCE = 5 V;
IC = 10 mA; VCE = 5 V
D.C. current gain
–I_C = 1 mA; –V_CE = 5 V
–I_C = 10 mA; –V_CE = 5 V
–I_C = 100 mA; –V_CE = 5 V
–V_CEsat max. 0.4
VBE(on) max. 0.7
max. -
0.4 V
-V
0.9 V
h_FE
min.
100
max.
300
h_FE
min.
100
h_FE
min.
75
Noise figure at R_S = 1 kW
–I_C = 100 mA; –V_CE = 5 V
f = 10 Hz to 15.7 kHz
NF
Transition frequency
V_CE = 5 V; I_C = 10 mA; f = 100 MHz f_T
max.
min.
max.
5
dB
150
MHz
225
MHz
Continental Device India Limited
Data Sheet
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