CMBT6520 Datasheet, PDF (2/3 Pages) Continental Device India Limited – HIGH-VOLTAGE TRANSISTOR

CMBT 6520
THERMAL CHARACTERISTICS
T_j = P (R_{th j–t} + R_{th s–a}) + T_amb
Thermal resistance
from junction to ambient
R_{th j–a}
CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I_C = 1 mA
Collector–base breakdown voltage
–V_(BR)CEO min.
–I_C = 100 µA
Emitter–base breakdown voltage
–V_(BR)CBO min.
–I_E = 10 µA
Collector cut–off current
–V_(BR)EBO min.
–V_CB = 250 V
Emitter cut-off current
–I_CBO
max.
–V_EB = 4 V
Output capacitance at f = 1 MHz
–I_EBO
max.
–V_CB = 20 V
Input capacitance at f = 1 MHz
C_c
max.
–V_EB = 0.5 V
C_e
max.
Saturation voltages
–I_C = 10 mA; –I_B = 1 mA
–I_C = 20 mA; –I_B = 2 mA
–I_C = 30 mA; –I_B = 3 mA
–I_C = 50 mA; –I_B = 5 mA
–V_CEsat
–V_BEsat
–V_CEsat
–V_BEsat
–V_CEsat
–V_BEsat
–V_CEsat
max.
max.
max.
max.
max.
max.
max.
D.C. current gain
–I_C = 1 mA; –V_CE = 10 V
–I_C = 10 mA; –V_CE = 10 V
–I_C = 30 mA; –V_CE = 10 V
–I_C = 50 mA; –V_CE = 10 V
–I_C = 100 mA; –V_CE = 10 V
Base emitter voltage
I_C = 100 mA; V_CE = 10 V
Transition frequency
–V_CE = 20 V; –I_C = 10 mA; f = 20 MHz
h_FE
h_FE
h_FE
h_FE
h_FE
V_BE(on)
f_T
min.
min.
min.
max.
min.
max.
min.
max.
min.
max.
556 °C/mW
350 V
350 V
5V
50 nA
50 nA
6 pF
100 pF
0.3 V
0.75 V
0.35 V
0.85 V
0.5 V
0.9 V
1.0 V
20
30
30
200
20
200
15
2V
20 MHz
200 MHz
Continental Device India Limited
Data Sheet
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