CMBT5400 Datasheet, PDF (2/3 Pages) Continental Device India Limited – HIGH VOLTAGE TRANSISTOR

CMBT5400
Total power dissipation at T_amb = 25°C
Storage temperature
Junction temperature
P_tot
max
250 mW
T_stg
–55 to +150 ° C
Tj
max.
150 ° C
THERMAL CHARACTERISTICS
T_j = P (R_{th j–t} + R_{th s–a}) + T_amb
Thermal resistance
from junction to ambient
R_{th j–a}
CHARACTERISTICS (at T_A = 25°C unless otherwise specified)
Collector–emitter breakdown voltage
–I_C = 1 mA; I_B = 0
Collector–base breakdown voltage
–V_(BR)CEO min.
–I_C = 100 µA; I_E = 0
Emitter–base breakdown voltage
–V_(BR)CBO min.
–I_E = 10 µA; I_C = 0
Collector cut–off current
–V_(BR)EBO min.
–V_CB = 100 V; I_E = 0 V
Emitter cut-off current
–I_CBO
max.
–V_EB = 3V; I_C = 0
Output capacitance at f = 1 MHz
–I_EBO
max.
I_E = 0; –V_CB = 10 V
C_c
max.
Saturation voltages
–I_C = 10 mA; –I_B = 1 mA
–I_C = 50 mA; –I_B = 5 mA
–I_C = 50 mA; –I_B = 5 mA
–V_CEsat
–V_BEsat
–V_CEsat
–V_BEsat
max.
max.
max.
max.
D.C. current gain
–I_C = 1 mA; –V_CE = 5 V
–I_C = 10 mA; –V_CE = 5 V
–I_C = 50 mA; –V_CE = 5 V
Noise figure at R_S = 1 kΩ
–I_C = 200 µA; –V_CE = 5 V
f = 10 Hz to 15.7 kHz
h_FE
min.
h_FE
min.
max.
h_FE
min.
NF
max.
200 °C/mW
120 V
130 V
5V
100 nA
50 nA
6 pF
0.2 V
1V
0.5 V
1V
50
40
180
40
8 dB
Continental Device India Limited
Data Sheet
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