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| CMBD1201 Datasheet, PDF (2/3 Pages) Continental Device India Limited – SILICON PLANAR EPITAXIAL HIGH SPEED DIODES | |||
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CMBD1201, CMBD1202, CMBD1203
CMBD1204, CMBD1205, CMBD4148
Reverse recovery time when switched from
IF = 10 mA to IR = 10 mA; RL = 100 â¦;
measured at IR = 1 mA
trr
<
4 ns
RATINGS (per diode) (at TA = 25°C unless otherwise specified)
Limiting values
Continuous reverse voltage
Repetitive peak reverse voltage
Repetitive peak forward current
Forward current
Non-repetitive peak forward current (per crystal)
VR
VRRM
IFRM
IF
t = 1 µs
t = 1 ms
t=1s
Storage temperature
IFSM
IFSM
IFSM
Tstg
Junction temperature
Tj
max.
max.
max.
max.
75 V
100 V
500 mA
215 mA
max.
4A
max. 1.0 A
max. 0.5 A
â55 to +150 ° C
max. 150 ° C
THERMAL RESISTANCE
From junction to ambient
CHARACTERISTICS (per diode)
Tj = 25 °C unless otherwise specified
Forward voltage
IF = 10 mA
IF = 200 mA
IF = 10 mA
CMBD4148
Reverse currents
VR = 20 V
VR = 75 V
VR = 25 V; Tj = 150 °C
Forward recovery voltage
IF = 10 mA; tp = 20 ns
Recovery charge
IF = 10 mA to VR = 5V; R = 100 â¦
Diode capacitance
VR = 0; f = 1 MHz
Reverse recovery time when switched from
IF = 10 mA to IR = 10 mA; RL = 100 â¦;
measured at IR = 1 mA
Rth jâa
=
500 K/W
VF
<
0.855 V
VF
<
1.05 V
VF
<
1.0 V
IR
<
25 nA
IR
<
5 µA
IR
<
30 µA
Vfr
<
1.75 V
Qs
<
45 pC
Cd
<
2 pF
trr
<
4 ns
Continental Device India Limited
Data Sheet
Page 2 of 3
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