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| CD909 Datasheet, PDF (2/3 Pages) Continental Device India Limited – NPN PLASTIC POWER TRANSISTOR | |||
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CD909
Total power dissipation up to TC = 25°C
Junction temperature
Storage temperature
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = 100 V
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 4 A; IB = 0.5 A
Base emitter on voltage
IC = 4A; VCE = 4V
D.C. current gain
IC = 1 A; VCE = 4 V
IC = 10 A; VCE = 4 V
Transition frequency
IC = 0.3 A; VCE = 3 V
Output capacitance
IE = 0; VCB = 10V
Second breakdown collector current
with base forward biased (non-repetitive)
VCE = 21.5 V; t = 50ms
Ptot
Tj
Tstg
ICBO
IEBO
VCEO
VCBO
VEBO
VCEsat
VBEsat
VBE(on)
hFE
hFE
fT
Co
I S/b
max. 75 W
max. 150 ºC
â65 to +150 ºC
max. 100 µA
max. 1000 µA
min. 90 V
min. 100 V
min. 6.0 V
max. 1.0 V
max. 1.5 V
max. 1.5 V
min. 80
max. 400
min.
5
min.
3 MHz
typ. 100 pF
typ. 3.5 A
Continental Device India Limited
Data Sheet
Page 2 of 3
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