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CD13005 Datasheet, PDF (2/4 Pages) Continental Device India Limited – NPN SILICON POWER TRANSISTOR
NPN SILICON POWER TRANSISTOR
CD13005
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION
DC Current Gain
*hFE
**IC=0.5A, VCE=5V
IC=2A, VCE=5V
Collector Emitter Saturation Voltage
*VCE (sat)
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1.5A, IB=0.5A
IC=1A, IB=0.25A,Tc=100ºC
Base Emitter Saturation Voltage
*VBE (sat)
IC=0.5A, IB=0.1A
IC=1A, IB=0.25A
IC=1A, IB=0.25A,Tc=100ºC
MIN TYP MAX
8
- 40
4
- 25
-
- 0.5
-
- 1.0
-
- 2.5
-
- 1.0
-
- 1.0
-
- 1.2
-
- 1.1
UNIT
V
V
V
V
V
V
V
DYNAMIC CHARACTERISTICS
DESCRIPTION
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
fT
Cob
TEST CONDITION
IC=100mA, VCE=10V,
f=1MHz
VCB=10V, f=0.1MHz
MIN TYP MAX
4.0 -
-
-
21
-
UNIT
MHz
pF
SWITCHING TIME
Turn On Time
Storage Time
Fall Time
ton
tstg
tf
VCC=125V, IC=1A, IB1=0.2A,
IB2=0.2A
1.1
µs
4.0
µs
0.7
µs
** hFE Classification:-
Note:- Product is pre selected in DC current
gain (Groups A to F). CDIL reserves the right
to ship any of the groups according to
production availability.
MARKING
X= Year of Manufacturer Code
Y= Month Code
*Pulse Test:- PW=300µs, Duty Cycle=2%
CD13005Rev_3 260404E
A
11-16
B
15-19
C
18-22
E
21-25
F
24-30
CD
13005A
XY
CD
13005B
XY
CD
13005C
XY
CD
13005E
XY
CD
13005F
XY
Continental Device India Limited
Data Sheet
Page 2 of 4