BDX33 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,70W)

NPN/PNP PLASTIC POWER TRANSISTORS
BDX33, 33A, 33B, 33C, 33D
BDX34, 34A, 34B, 34C, 34D
TO-220
Plastic Package
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST
BDX33 BDX33A BDX33B BDX33C BDX33D
CONDITION
BDX34 BDX34A BDX34B BDX34C BDX34D
Emitter-Cut off Current
Collector Emitter
Saturation Voltage
Base Emitter on Voltage
DC Current Gain
Diode Forward Voltage
I_EBO
V_CE(Sat)*
V_BE(on)*
h_FE*
V_F
V_EB=5V, I_C=O
I_C=4A, I_B=8mA
I_C=3A, I_B=6mA
I_C=4A, V_CE=3V,
I_C=3A, V_CE=3V
I_C=4A, V_CE=3V
I_C=3A, V_CE=3V
I_C=8A
ALL
<10
<2.5
<2.5V
>750
<10
<2.5
<2.5
>750
<10
<2.5
<2.5
-
>750
<4
<10
<2.5
<2.5
-
>750
<10
<2.5
<2.5
-
>750
SECOND BREAKDOWN
Secondbreakdown
Collector Current
With Base Forward
I_S/b** V_CE=25V,
Biased (non-repetitive)
BDX33 Series
>2.8
V_CE=20V,
BDX34 Series
>3.5
V_CE=36V,
BDX33 Series
>1.0
V_CE=33V,
BDX34 Series
>1.0
UNIT
mA
V
V
V
V
V
A
A
A
A
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
SYMBOL TEST
CONDITION
DYNAMIC CHARACTERISTICS
Small- Signal
Current Gain
| h_fe |
I_c=1A,V_CE=5V,
f=1MHz
VALUE
min
max
1000
UNIT
Output Capacitance
C_ob
V_CB=10V,I_E=0,
f=1MHz
BDX33 series
BDX34 series
200
pF
300
Transition Frequency
f_T
V_CE=5V, I_C=1A,
f=1MHz ALL
3.0
MHZ
*Pulse Test:- Pulse Width<300µs, Duty Cycle=<2%
**Pulse Test non- repetitive : Pulse Width=0.25s
Continental Device India Limited
Data Sheet
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