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| BD956 Datasheet, PDF (2/3 Pages) Continental Device India Limited – NPN PLASTIC POWER TRANSISTORS | |||
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BD949, BD951, BD953, BD955
BD950, BD952, BD954, BD956
Collector current (Peak value)
Total power dissipation upto Tmb=25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to ambient
From junction to mounting base
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IE = 0; VCB = VCBO
IE = 0; VCB = ½ VCBO; Tj = 150°C
IB = 0; VCE = ½ VCEO
Emitter cut-off current
IC = 0; VEB = 5 V
Breakdown voltages
IC = 1 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltage
IC = 2 A; IB = 0.2 A
Base emitter on voltage
IC = 2 A; VCE = 4 V
D.C. current gain
IC = 0.5 A; VCE = 4 V
IC = 2 A; VCE = 4 V
Transition frequency
IC = 0.5 A; VCE = 4 V; f = 1 MHz
ICM
max.
Ptot
max.
Tj
max.
Tstg
Rth jâa
Rth jâmb
8.0
A
40
W
150
°C
â65 to +150 °C
70
K /W
3.12
K /W
949 951 953 955
950 952 954 956
ICBO
max.
50
µA
ICBO
max.
1.0
mA
ICEO
max.
0.1
mA
IEBO
max.
VCEO
VCBO
VEBO
min. 60
min. 60
min.
VCEsat* max.
VBE(on)* max.
0.2
mA
80 100 120 V
80 100 120 V
5.0
V
1.0
V
1.4
V
hFE*
min.
40
hFE*
min.
20
fT
min.
3
MHz
Switching time
VCC = 20 V; IC = 1 A
Icon = 1A; IBon = âIBoff = 0.1A
RL = 20â¦
Turn on time
NPN
ton
typ.
0.3
µs
Turn off time
NPN
toff
typ.
1.5
µs
PNP
ton
typ.
0.1
µs
PNP
toff
typ.
0.4
µs
* Measured under pulse conditions: tp ⤠300µs; duty cycle ⤠2%
Continental Device India Limited
Data Sheet
Page 2 of 3
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