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BC307 Datasheet, PDF (2/5 Pages) Motorola, Inc – Amplifier Transistors(PNP)
SILICON PLANAR EPITAXIAL TRANSISTORS
BC 307, A, B, C
BC 308, A, B, C
BC 309, A, B, C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
Collector Emitter Breakdown
BVCEO IC=2mA,IB=0
Voltage
BC307
45
BC308, BC309
25
Emitter Base Breakdown Voltage
BVEBO IE=100uA, IC=0
5
Collector Emitter Leakage Current
BC307 ICES VCES =50V, VBE =0
BC308, BC309
VCES =30V, VBE =0
BC307
VCES =50V, VBE =0,
TA =125oC
BC308, BC309
VCES =30V, VBE =0,
TA =125oC
DC Current Gain
A hFE IC=10uA,VCE=5V
B
C
BC307, BC308, BC309
IC=2mA,VCE=5V
120
A
120
B
200
C
420
Collector Emitter Saturation
Voltage
Base Emitter Saturation Voltage
Base Emitter On Voltage
A
IC=2mA,VCE=5V*
B
C
VCE(sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VBE(sat) IC=10mA,IB=0.5mA
IC=100mA,IB=5mA
VBE(on) IC=2mA,VCE=5V
0.55
TYP
90
150
270
170
290
500
120
180
300
0.10
0.25
0.7
1.0
0.62
MAX
15
15
4
4
800
220
460
800
0.3
0.7
UNITS
V
V
V
nA
nA
µA
µA
V
V
V
V
V
Continental Device India Limited
Data Sheet
Page 2 of 5