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BC237 Datasheet, PDF (2/5 Pages) Motorola, Inc – Amplifier Transistors
NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC237,238, A,B,C
BC239, B,C
CB E
TO-92
Plastic Package
For Lead Free Parts, Device
Part # will be Prefixed with
"T"
ELECTRICAL CHARACTERISTICS (Ta=25ºC unless specified otherwise)
DESCRIPTION
DC Current Gain
SYMBOL
hFE
TEST CONDITION
IC=10µA, VCE=5V
A
B
C
IC=2mA, VCE=5V
BC237/238/239
A
B
C
*IC=100mA, VCE=5V
A
B
Collector Emitter Saturation Voltage VCE (sat)
C
IC=10mA, IB=0.5mA
Base Emitter Saturation Voltage
Base Emitter On Voltage
VBE (sat)
VBE (on)
*IC=100mA, IB=5mA
BC237/239
BC238
IC=10mA, IB=0.5mA
*IC=100mA, IB=5mA
IC=2mA, VCE=5V
SMALL SIGNAL CHARACTERISTICS
DESCRIPTION
SYMBOL
TEST CONDITION
Transistors Frequency
fT IC=0.5mA, VCE=3V, f=100MHz
BC237
BC238
BC239
Collector Output Capacitance
Emitter Input Capacitance
Noise Figure
IC=10mA, VCE=5V, f=100MHz
Cob
VCB=10V, IE=0, f=1MHz
Cib
VEB=0.5V, f=1MHz
NF
VCE=5V, IC=0.2mA, RS=2KΩ,
f=1KHz, B=200Hz
BC237/238
BC239
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
BC237_239Rev_1 201205E
MIN
MAX
TYP90
TYP150
TYP270
120
800
120
220
200
460
380
800
TYP120
TYP180
TYP300
0.20
0.60
0.80
0.83
1.05
0.55
0.70
MIN
MAX
TYP100
TYP120
TYP140
150
4.5
TYP8
10
4.0
UNITS
V
V
V
V
V
V
UNITS
MHz
MHz
MHz
MHz
pF
pF
dB
dB
Continental Device India Limited
Data Sheet
Page 2 of 5