BC171 Datasheet, PDF (2/4 Pages) Micro Electronics – NPN HIGH GAIN LOW NOISE SILICON PLANAR EPITAXIAL TRANSISTOR

NPN SILICON PLANAR TRANSISTORS
BC171 , A, B
BC172, A, B, C
BC174, A, B
TO-92
Plastic Package
DESCRIPTION
SYMBOL TEST CONDITION
VALUE
MIN TYP MAX
UNIT
DC Current Gain
h_FE V_CE=5V,I_C=10µA
BC171A, 2A, 4A
BC171B, 2B, 4B
BC172C
BC174
BC171
BC172
V_CE=5V,I_C=2mA
90
150
270
120
450
120
800
120
800
BC171A, 2A, 4A
BC171B, 2B, 4B
BC172C
BC171A, 2A, 4A
BC171B, 2B, 4B
BC172C
V_CE=5V,I_C=100mA
120
220
180
460
380
800
120
180
300
Base Emitter Saturation Voltage
Collector Emitter Saturation
Voltage
Base Emitter on Voltage
DYNAMIC CHARACTERISTICS
V_BE(sat) I_C=10mA,I_B=0.5mA
V_{CE (sat )} I_C=10mA,I_B=0.5mA
I_C=100mA,I_B=5mA
V_{BE (on)} I_C=2mA, V_CE = 5V
0.7
V
0.25
V
0.60
V
0.55
0.70
V
Transition Frequency
f_T I_C=10mA, V_CE=5V
BC171
f=100MHz
150
BC172
150
BC174
150
MHz
Output Capacitance
Input Capacitance
C_ob I_E=0, V_CB=10V
f=1MHz
C_ib Ic=0, V_EB=0.5V
f=1MHz
4.50
pF
10
pF
Small Signal Current Gain
| h_fe | V_CE =5V,I_C=2mA
BC171, 2, 4
f=1KH_Z
125
900
BC171A, 2A, 4A,
125
260
BC171B, 2B, 4B
240
500
BC172C
450
900
Noise Figure
NF V_CE =5V,I_C=0.2mA
BC171
R_S=2KΩ,f=1KH_Z, f=200Hz
BC172
BC174
Continental Device India Limited
Data Sheet
10
dB
10
10
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