BC167A Datasheet, PDF (2/5 Pages) Continental Device India Limited – NPN SILICON PLANAR EPITAXIAL TRANSISTORS

NPN SILICON PLANAR EPITAXIAL TRANSISTORS
BC167A, BC167B
BC168A, BC168B, BC168C
BC169B, BC169C
TO-92
Plastic Package
ELECTRICAL CHARACTERISTICS (Ta=25ºC Unless Specified Otherwise)
DESCRIPTION
SYMBOL TEST CONDITION MIN
DC Current Gain
A
h_FE I_C=0.01mA,V_CE=5V
B
C
A
I_C=2mA,V_CE=5V
120
B
180
C
380
BC167A, 168A
BC167B, 168B
BC168C
I_C=100mA,V_CE=5V
Collector Emitter Saturation Voltage
V_CE(Sat)* I_C=10mA,I_B=0.5mA
V_CE(Sat)* I_C=100mA,I_B=5mA**
Base Emitter Saturation Voltage
V_BE(Sat) * I_C=10mA,I_B=0.5mA
V_BE(Sat) * I_C=100mA,I_B=5mA**
Base Emitter On Voltage
V_BE(On)
I_C=2mA,V_CE=5V
I_C=0.1mA,V_CE=5V
I_C=100mA,V_CE=5V**
0.55
TYP
MAX UNITS
90
150
270
220
460
800
120
200
400
0.2
V
0.6
V
0.83
V
1.05
V
0.7
V
0.55
V
0.83
V
DESCRIPTION
DYNAMIC CHARACTERISTICS
Transistors Frequency
Collector Capacitance
Emitter Capaitance
SYMBOL TEST CONDITION MIN
f_T
I_C=0.5mA, V_CE=3V
f=100MHz
I_C=10mA, V_CE=5V
150
f=100MHz
C_cbo V_CB=10V, I_E=0
f=1MHz
C_ebo V_EB =0.5V, f =1MHz
TYP
MAX UNITS
85
MHz
MHz
4.5
pF
8.0
pF
Continental Device India Limited
Data Sheet
Page 2 of 5