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| 2N6111 Datasheet, PDF (2/3 Pages) Continental Device India Limited – PNP PLASTIC POWER TRANSISTOR | |||
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2N6111
Collector current (Peak value)
Base current
Total power dissipation up to TC = 25°C
Derate above 25°C
Junction temperature
Storage temperature
THERMAL RESISTANCE
From junction to case
CHARACTERISTICS
Tamb = 25°C unless otherwise specified
Collector cutoff current
IB = 0; VCE = 20V
VEB(off) = 1.5V; VCE = 40V
VEB(off) = 1.5V; VCE = 30V; TC = 150°C
Emitter cut-off current
IC = 0; VEB = 5V
Breakdown voltages
IC = 100 mA; IB = 0
IC = 1 mA; IE = 0
IE = 1 mA; IC = 0
Saturation voltages
IC = 3A; IB = 0.3A
IC = 7 A; IB = 3 A
Base emitter on voltage
IC = 3 A; VCE = 4V
IC = 7 A; VCE = 4V
D.C. current gain
IC = 3A; VCE = 4V
IC
IB
Ptot
Tj
Tstg
Rth jâc
ICEO
ICEX
ICEX
IEBO
VCEO(sus)*
VCBO
VEBO
VCEsat*
VCEsat*
VBE(on)*
VBE(on)*
hFE*
IC = 7A; VCE = 4V
Small-signal current gain f = 50 KHz
IC = 0.5A; VCE = 4V
Output capacitance at f = 1 MHz
IE = 0; VCB = 10V
Transition frequency at f = 1 MHz
IC = 500 mA; VCE = 4V
hFE*
hfe
Co
fT (1)
* Pulse test: pulse width ⤠300 µs; duty cycle ⤠2%.
(1) fT = |hfe|⢠ftest
max.
10 A
max. 3.0 A
max.
40 W
max. 0.32 W/°C
max. 150 ºC
â65 to +150 ºC
=
3.125 °C/W
max.
max.
max.
max.
min.
min.
min.
max.
max.
max.
max.
min.
max.
min.
min.
max.
min.
1.0 mA
0.1 mA
2.0 mA
1.0 mA
30 V
40 V
5.0 V
1.0 V
3.5 V
1.5 V
3.0 V
30
150
2.3
20
250 pF
10 MHz
Continental Device India Limited
Data Sheet
Page 2 of 3
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