2N5294 Datasheet, PDF (2/4 Pages) List of Unclassifed Manufacturers – Chip Transistor

2N5294, 2N5296, 2N5298
RATINGS (at T_A=25°C unless otherwise specified)
Limiting values
Collector-base voltage (open emitter)
Collector-emitter voltage (open base)
Collector-emitter voltage (V_BE = 1.5V)
Collector-emitter voltage (R_BE = 100Ω)
Emitter-base voltage (open base)
Collector current
Base current
Total power dissipation up to T_C = 25°C
Derate above 25°C
V_CBO
V_CEO
V_CEV
V_CER
V_EBO
I_C
I_B
P_tot
Total power dissipation up to T_A = 25°C
P_tot
Derate above 25°C
Junction temperature
T_j
Storage temperature
T_stg
5294 5296 5298
max. 80 60 80 V
max. 70 40 60 V
max. 80 60 80 V
max. 75 50 70 V
max. 7.0 5.0 5.0 V
max.
4.0
A
max.
2.0
A
max.
36
W
max.
0.288
W/° C
max.
1.8
W
max.
0.0144
W/°C
max.
150
°C
–65 to +150 °C
THERMAL RESISTANCE
From junction to ambient
From junction to case
R_{th j–a}
R_{th j–c}
70
° C/W
3.5
° C/W
CHARACTERISTICS
T_amb = 25°C unless otherwise specified
Collector cutoff current
V_CE = 65 V; V_BE = 1.5 V
V_CE = 35 V; V_BE = 1.5 V
V_CE = 65 V; V_BE = 1.5 V; T_C = 150°C
V_CE = 35 V; V_BE = 1.5 V; T_C = 150°C
V_CE = 50 V; R_BE = 100 Ω
V_CE = 50 V; R_BE = 100 Ω; T_C = 150°C
Emitter cut-off current
I_C = 0; V_EB = 7 V
I_C = 0; V_EB = 5 V
Breakdown voltages
I_C = 100 mA; I_B = 0
I_C = 1 mA; I_E = 0
I_E = 1 mA; I_C = 0
Saturation voltages
I_C = 0.5 A; I_B = 0.05 A
I_C = 1 A; I_B = 0.1 A
I_C = 1.5 A; I_B = 0.15 A
Base-emitter on voltage
I_C = 0.5 A; V_CE = 4 V
I_C = 1 A; V_CE = 4 V
I_C = 1.5 A; V_CE = 4 V
5294 5296 5298
I_CEV
I_CEV
I_CEV
I_CEV
I_CER
I_CER
max. 0.5 – 0.5 mA
max. – 2.0 – mA
max. 3.0 – 3.0 mA
max. – 5.0 – mA
max. 0.5 – 0.5 mA
max. 2.0 – 2.0 mA
I_EBO
I_EBO
max. 1.0 – – mA
max. – 1.0 1.0 mA
V_CEO(sus)* min. 70 40 60 V
V_CBO
min. 80 60 80 V
V_EBO
min. 7 5 5 V
V_CEsat*
V_CEsat*
V_CEsat*
max. 1.0 – – V
max. – 1.0 – V
max. – – 1.0 V
V_BE(on)*
V_BE(on)*
V_BE(on)*
max. 1.1 – – V
max. – 1.3 – V
max. – – 1.5 V
Continental Device India Limited
Data Sheet
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