TN2222A Datasheet, PDF (1/5 Pages) Continental Device India Limited – NPN SILICON PLANAR SWITCHING TRANSISTOR

Continental Device India Limited
An ISO/TS16949 and ISO 9001 Certified Company
NPN SILICON PLANAR SWITCHING TRANSISTOR
TN2222A
TO-237
Plastic Package
E ^BC
For use as a Medium Power Amplifier
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Power Dissipation @ T_a=25ºC
Power Dissipation @ T_c=25ºC
@ T_a=25ºC PCB Land Area for
Collector Lead >1 sq inch
@ T_a=25ºC with heat sink
Operating And Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
P_D
T_j, T_stg
VALUE
40
75
6.0
800
0.75
2.2
1.2
1.5
- 55 to +150
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
57
Junction to Ambient in free air
R_{th (j-a)}
167
Thermal Resistance >with PCB land
area for collector lead >1 sq inch
R_{th (j-a)}
104
Thermal Resistance Junction to
Ambient with heat sink
R_{th (j-a)}
83
ELECTRICAL CHARACTERISTICS (T_a=25ºC unless specified otherwise )
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Collector Emitter Voltage
*V_CEO
I_C=10mA, I_B=0
40
Collector Base Voltage
Emitter Base Voltage
V_CBO
V_EBO
I_C=10µA, I_E=0
75
I_E=10µA, I_C=0
6
Collector Cut Off Current
I_CEX
V_CE=60V, V_EB(off)=3V
Collector Cut Off Current
I_CBO
V_CB=60V, I_E=0
V_CB=60V, I_E=0, T_a=150ºC
Emitter Cut Off Current
I_EBO
V_EB=3V, I_C=0
Base Cut Off Current
I_BL
V_CE=60V, V_EB(off)=3V
DC Current Gain
h_FE
I_C=0.1mA, V_CE=10V
35
I_C=1mA, V_CE=10V
50
I_C=10mA, V_CE=10V
75
I_C=150mA, V_CE=10V
100
I_C=150mA, V_CE=1V
50
I_C=500mA, V_CE=10V
40
*Pulse Test: Pulse Width < 300µs, Duty Cycle < 2%
TN2222ARev080304E
Continental Device India Limited
Data Sheet
UNIT
V
V
V
mA
W
W
W
W
ºC
ºC/W
ºC/W
ºC/W
ºC/W
MAX
10
10
10
10
20
UNIT
V
V
V
nA
nA
µA
nA
nA
300
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