TIP33 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,40-100V,80W)

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH POWER TRANSISTORS
TIP33, A, B, C NPN
TIP34, A, B, C PNP
TO- 3PN Non Isolated
Plastic Package
For General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Total Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V_CEO
V_CBO
V_EBO
I_C
*I_CM
I_B
P_D
TIP33
TIP34
40
40
T_j, T_stg
TIP33A
TIP34A
TIP33B
TIP34B
60
80
60
80
5.0
10
15
3.0
80
0.64
- 65 to +150
TIP33C
TIP34C
100
100
*Pulse test: Pulse width = 10ms , Duty cycle <10%
THERMAL CHARACTERISTICS
Thermal Resistance, Junction to Case
junction to Free Air Thermal Resistance
R_{th (j-c)}
R_{th (j-a)}
1.56
35.7
ELECTRICAL CHARACTERISTICS (T_c=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL TEST CONDITION ^MIN
Collector Emitter Sustaining Voltage
**V_{CEO (sus)}
I_C=30mA, I_B=0
TIP33/TIP34
40
TIP33A/TIP34A
60
TIP33B/TIP34B
80
TIP33C/TIP34C
100
Collector Emitter Cut Off Current
I_CEO
V_CE=30V, I_B=0
TIP33/A, TIP34/A
V_CE=60V, I_B=0
TIP33B/C, TIP34B/C
Collector Emitter Cut Off Current
I_CES
V_CE=Rated V_CEO, V_EB=0
Emitter Base Cut Off Current
I_EBO
V_EB=5V, I_C=0
DC Current Gain
**h_FE
I_C=1A, V_CE=4V
40
I_C=3A, V_CE=4V
20
Collector Emitter Saturation Voltage
Base Emitter On Voltage
**V_{CE (sat)}
**V_{BE (on)}
I_C=3A, I_B=0.3A
I_C=10A, I_B=2.5A
I_C=3A, V_CE=4V
I_C=10A, V_CE=4V
**Pulse test: Pulse width 300µs, Duty cycle <2%
TIP33_34Rev110706E
TYP
MAX
0.7
0.7
0.4
1.0
100
1.0
4.0
1.6
3.0
UNIT
V
V
V
A
A
A
W
W/ºC
ºC
ºC/W
ºC/W
UNIT
V
V
V
V
mA
mA
mA
mA
V
V
V
V
Continental Device India Limited
Data Sheet
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