TIP142T Datasheet, PDF (1/3 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR POWER DARLINGTON TRANSISTORS
TIP142T NPN
TIP147T PNP
TO-220
Plastic Package
For use in Power Linear and Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current
Collector Peak Current (Repetitive)
Base Current
Power Dissipation @ Tc=25ºC
Operating & Storage Junction
Temperature Range
SYMBOL
V_CBO
V_CEO
V_EBO
I_C
I_CM
I_B
P_tot
T_j, T_stg
THERMAL RESISTANCE
Junction to Case
R_{th (j-c)}
VALUE
100
100
5.0
10
20
0.5
80
- 65 to +150
1.0
UNIT
V
V
V
A
A
W
ºC
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC Unless Otherwise Specified)
DESCRIPTION
Collector Cut off Current
Collector Cut off Current
Emitter Cut off Current
Collector Emitter (sus) voltage
Collector Emitter Saturation Voltage
Base Emitter on Voltage
DC Current Gain
SYMBOL
I_CBO
I_CEO
I_EBO
V_CEO *
V_CE(sat)*
V_{BE(on) *}
h_FE *
TEST CONDITION
V_CB=100V, I_E=O
V_CE=50V, I_B=0
V_EB=5V, I_C=0
I_C=30mA, I_B=0
I_C=5A, I_B=10mA
I_C=10A, I_B=40mA
I_C=10A, V_CE=4V
I_C=5A, V_CE=4V
I_C=10A, V_CE=4V
MIN TYP MAX
1.0
2.0
2.0
100
2.0
3.0
3.0
1000
500
UNIT
mA
mA
mA
V
V
V
SWITCHING TIME
Turn on time
Turn off time
t_on
0.9
µs
Ic=10A, I_B1=I_B2= - 40mA,
t_off
R_L=3Ω
4.0
µs
*Pulsed : Pulse duration =200µs, Duty Cycle=1.5%
Continental Device India Limited
Data Sheet
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