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TIP140 Datasheet, PDF (1/3 Pages) Mospec Semiconductor – POWER TRANSISTORS(10A,60-100V,125W)
Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON PLANAR DARLINGTON POWER TRANSISTORS
TIP140, 141, 142 NPN
TIP145, 146, 147 PNP
TO- 3PN Non Isolated
Plastic Package
Designed for General Purpose Amplifier and Low Frequency Switching Applications
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
SYMBOL
Collector Base Voltage
Collector Emitter Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Total Power Dissipation at Tc = 25ºC
Operating and Storage Junction
Temperature Range
*5ms < 10% Duty Cycle
THERMAL RESISTANCE
From Junction to case
From Junction to Ambient in free air
VCBO
VCEO
VEB0
IC
*ICM
IB
PD
Tj, Tstg
Rth (j-c)
Rth (j-a)
TIP140
TIP145
60
60
TIP141
TIP146
80
80
5.0
10
15
0.5
125
- 65 to +150
TIP142
TIP147
100
100
1.0
35.7
UNIT
V
V
V
A
A
A
W
ºC
ºC/W
ºC/W
ELECTRICAL CHARACTERISTICS (Tc=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Collector Emitter Sustaining Voltage **VCEO (sus)
IC =30mA, IB=0
TIP140/145
TIP141/146
TIP142/147
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter Saturation Voltage
ICEO
ICBO
IEBO
**hFE
**VCE (sat)
**VBE (sat)
VCE =1/2 rated VCEO, IB=0
VCB =Rated VCBO, IE=0
VEB =5.0 V, IC=0
IC =5A, VCE =4V
IC =10A, VCE =4 V
IC =5A, IB=10mA
IC =10A, IB =40mA
IC =10A, IB =40mA
Base Emitter On Voltage
**VBE (on)
IC =10A, VCE =4 V
MIN
60
80
100
1000
500
SWITCHING TIME
DESCRIPTION
SYMBOL
TEST CONDITION
MIN
Delay Time
Rise Time
Storage Time
Fall Time
td
tr
ts
VCC=30V, IC=5A, IB=20mA,
Duty Cycle < 2%, IB1=IB2, RC &
RB varied Tj=25ºC
tf
**Pulsed test : Pulse witdh = 300µs, duty cycle < 2%
TIP140_147 Rev190706E
TYP MAX UNIT
V
V
V
2.0 mA
1.0 mA
2.0 mA
2.0
V
3.0
V
3.5
V
3.0
V
TYP MAX
0.15
0.55
2.5
2.5
UNIT
µs
µs
µs
µs
Continental Device India Limited
Data Sheet
Page 1 of 3
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